2001. 9. 7
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA2400
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
DIFFERENTIAL AMP. APPLICATION.
FEATURES
Matched Pairs for Differential Amplifiers.
High Breakdown Voltage : V
CEO
=-120V(Min.).
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTC3400.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification G :200 400, In case of G , :A to G, GR: 200~400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
Emitter Current
I
E
100
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-120V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-120
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=-6V, I
C
=-2mA
200
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-1mA
-
-
-0.3
V
Transition Frequency
f
T
V
CE
=-6V, I
C
=-1mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4.0
-
pF
Noise Figure
NF
V
CE
=-6V, I
C
=-0.1mA, f=1kHz, Rg=10k
-
1.0
10
dB
h
FE
Classification
h
FE
h
FE
Classification
h
FE
GA
200 220
GE
310 340
GB
220 250
GF
340 370
GC
250 280
GG
370 400
GD
280 310
2001. 9. 7
2/2
KTA2400
Revision No : 1
CB
COLLECTOR-BASE VOLTAGE V (V)
C - V
COLLECTOR OUTPUT CAPACITANCE
CB
-1
-3
-10
10
1
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
-2
-4
C
0
COLLECTOR CURRENT I (mA)
-1
50
DC CURRENT GAIN h
FE
100
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
COLLECTOR POWER DISSIPATION
0
C
700
50
25
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
COLLECTOR-EMITTER SATURATION
CE(sat)
-0.01
-0.1
COLLECTOR CURRENT I (mA)
C
C
CE(sat)
V - I
I - V
C
BE
BE
BASE-EMITTER VOLTAGE V (V)
0
-0.2
-0.4
-30
C
0
COLLECTOR CURRENT I (mA)
-5
(LOW CURRENT AND,
-6
-8
-10
-2
-3
-4
-5
I =-1
A
B
0
-2
-3
-4
-5
-6
-7
-8
-9
-10
-0.1
-0.3
-1
-3
-10
-30 -50
300
500
1k
3k
5k
COMMON EMITTER
V =-6V
Ta=25 C
CE
Ta=25 C
Ta=100 C
Ta=-25 C
VOLTAGE V (V)
-0.3
-3
-10
-1
-50
-0.03
-0.05
-0.1
-0.3
-0.5
I /I =10
Ta=25 C
C B
Ta=100 C
Ta=-25 C
Ta=25 C
-0.6
-0.8
-1.0
-1.2
-1.4
-10
-15
-20
-25
COMMON EMITTER
V =-6V
Ta=25 C
CE
Ta
=
100
C
Ta
=-25 C
Ta
=
25
C
ob
C (pF)
ob
-5
-30
-100
3
5
I =O
f=1MHz
Ta=25 C
E
P (mW)
75
100
125
150
175
100
200
300
400
500
600
LOW VOLTAGE REGION)
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